School of Advanced Technology

ADDRESS
School of Advanced Technology
Xi'an Jiaotong-Liverpool University
111 Ren'ai Road Suzhou Dushu Lake Science and Education Innovation District , Suzhou Industrial Park
Suzhou,Jiangsu Province,P. R. China,215123
1. A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters

Author:Li, XT;Cui, M;Liu, W

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have superior advantages like low leakage current and large gate swing. To fully use those advantages, this paper proposes a monolithic sawtooth generator circuit, which can generate a 100 kHz sawtooth waveform with a peak-to-peak voltage of around 3.5 V under 10 V power supply. The integrated circuit is calibrated and simulated by Advanced Design System (ADS). Good agreement between simulations and experimental results indicates the feasibility of GaN MIS-HEMTs on high power electronics application.
2. Design and Evaluation of GaN-based Over-Temperature Protection Circuit

Author:Kang, L;Wen, HQ;Bu, QL;Liu, W

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:Over-temperature protection is becoming essential for the power converter design with the increase of switching frequency and power density demand. Especially for Gallium Nitride (GaN) based power integrated circuits (ICs), the issue of over-heating may result in the system destructive breakdown. Originated from the GaN based power integration technique, this paper presents a GaN-based on-chip temperature sensing and protection (OTSP) circuit that can deliver a desirable signal at the critical temperature. Specifically, the OTSP circuit is constructed using Advanced Designed System (ADS). The single D-mode and E-mode components are simulated with the different VGS to show its characteristic. The drain current of lateral field-effect rectifier is examined to imply the temperature effect on this component. Finally, the voltage transfer characteristic is stated.
3. Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

Author:Cai, YT;Wang, Y;Cui, M;Liu, W;Wen, HQ;Zhao, CZ;Mitrovic, IZ;Taylor, S;Chalker, PR

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:In this paper, a 2-D simulation of breakdown characteristics of GaN-based Metal Insulator Semiconductor High Electron Mobility Transistors with a high permittivity passivation layer was performed. As a result, it is found that the breakdown voltage is enhanced with permittivity of the passivation layer due to reduction of the electric field at the drain edge of gate. In addition, the GaN-based MIS-HEMTs with three different passivation (Si3N4 passivation, Al2O3/SiNx stack passivation and ZrO2/SiNx stack passivation) were fabricated and compared. The breakdown voltage of the MIS-HEMTs passivated with ZrO2/SiNx stack is 483 V, which is 22%% higher than for the MIS-HEMTs with Si3N4 passivation. Moreover, the devices passivated with SiNx or bilayer Al2O3/SiNx show significant current collapse (similar to 33%% and similar to 8%%, respectively), while the bilayer ZrO2/SiNx passivated devices exhibit negligible current collapse of similar to 1%%.
4. Characteristics of Ni/AlO Pt RRAM devices with various dielectric fabrication temperatures

Author:Shen, Z.J. ; Zhao, C. ; Zhao, C.Z. ; Mitrovic, I.Z. ; Yang, L. ; Xu, W.Y. ; Lim, E.G. ; Luo, T. ; Huang, Y.B.

Source:17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings,2019,Vol.

Abstract:In this work, the Ni/AlOx/Pt RRAM device was fabricated with solution-processed AlOx thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology. © 2019 IEEE.
5. Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide

Author:Fang, YX;Zhao, TS;Zhao, C;Zhao, CZ;Mitrovic, IZ;Yang, L

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:In this work, the effect of hydrogen peroxide (H2O2) on the biased radiation stress (BRS) and biased illumination stress (BIS) stability of solution-processed AlOx thin films were investigated. It is found that the BRS and BIS stabilities, as well as the leakage behavior were significantly improved through employing H2O2 in the solution-process. Through the TGA-DSC analysis of the precursor powder with and without the presence of H2O2, we assumed that H2O2 effectively reduced the oxygen vacancy defect density by strong oxidation and minimizes defects by eliminating the impurities at lower temperatures compared to a conventional solution process.
6. Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric

Author:Zhao, TS;Zhao, C;Zhao, CZ;Xu, WY;Yang, L;Mitrovic, IZ;Hall, S;Lim, EG;Yu, SC

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (H2O2). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm(2).V-1.s(-1), a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 10(6).
7. Design of GaN-based Voltage Reference Circuit for a Wide-Temperature-Range Operation

Author:Chen, XD;Wen, HQ;Bu, QL;Liu, W

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:Reference voltage generators are important for various electronic systems and their stability with respect to the voltage, temperature, and process is essential for the system's normal operation. This paper presents a GaN-based voltage reference circuit, which can operation stability for a wide temperature range that is ranging from room temperature up to 250 degrees C. Main circuit structure of the GaN-based voltage reference circuit is described. The low power dissipation is achieved with the set of operation point. The simulation evaluation is conducted, including the characteristics of main components and key relationship of the reference output under a wide temperature range. Main results are provided to validate the effectiveness of the GaN-based design.
8. The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs

Author:Lu, BH;Cui, M;Liu, W

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:The threshold voltage instability in AlGaN/GaN MIS-HEMTs is due to dielectric induced traps. In this paper, DC I-V and fast transient I-V measurements were used to characterize the threshold voltage hysteresis (Delta VTH) and threshold voltage shift (VTH shift). The VTH instability with different etch depths of D-mode devices was systematically studied. The experiment results reveal that Delta VTH increases with thickness of A1GaN barrier layer and decrease with the period of measurement signal, indicating the obviously fast transient VTH hysteresis contributed by AlGaN barrier. Moreover, an obvious VTH shift was observed at different gate voltages and is independent of etch depths of D-mode devices, indicating very slow traps at Al2O3/III-N interface. Those results give important implications to reduce transient VTH instability by improving the quality of AlGaN barrier using AlGaN/GaN MIS-HEMTs, especially for high frequency switching applications.
9. Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors

Author:Liu, QH;Zhao, C;Zhao, CZ;Mitrovic, IZ;Hall, S;Xu, WY;Yang, L;Lim, EG;Wang, QN;Wei, YL;Cao, YX

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:In this study, we describe how to obtain high-quality Al2O3 dielectric thin films and their implementation in In2O3 thin film transistors by combining plasma treatment and combustion process at low temperatures (250 degrees C). The single layer Al2O3 dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al2O3. The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8x10(4), and a superior mobility of 136 cm(2) V-1 s(-1).
10. Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode

Author:Bu, QL;Cai, YT;Cui, M;Wen, HQ;Liu, W

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:Power diodes with low turn-on voltage and high breakdown voltage are highly demanded in order to improve the power conversion efficiency for different applicants. This paper focused on the comparison between the two structures GaN-Schottky barrier diode (SBD), with and without recessed anode schemes, which are utilized with different cathode-to-anode separations (L-AC). The electrical characteristics of these devices are illustrated, the turn-on voltage (V-T) and breakdown voltage (BV) are compared under the related L-AC. The best performance is found with the recessed anode SBD which gives a turn-on voltage of 0.75 V, a BV of 462 V.
11. Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator

Author:Sun, BB;Wen, HQ;Bu, QL;Liu, W

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.
12. The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters

Author:Cui, M;Cai, YT;Bu, QL;Liu, W;Wen, HQ;Mitrovic, IZ;Talyor, S;Chalker, PR;Zhao, CZ

Source:17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019),2019,Vol.

Abstract:Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 degrees C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 degrees C to 250 degrees C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.
Total 12 results found
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