A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters

Li, XT;Cui, M;Liu, W

[Li, Xueteng; Cui, Miao; Liu, Wen] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou, Peoples R China.

17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019)

DOI:10.1109/ICICDT.2019.8790928

Publication Year:2019

Document Type:Conference Paper

Identifier:http://hdl.handle.net/20.500.12791/001178

Abstract

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have superior advantages like low leakage current and large gate swing. To fully use those advantages, this paper proposes a monolithic sawtooth generator circuit, which can generate a 100 kHz sawtooth waveform with a peak-to-peak voltage of around 3.5 V under 10 V power supply. The integrated circuit is calibrated and simulated by Advanced Design System (ADS). Good agreement between simulations and experimental results indicates the feasibility of GaN MIS-HEMTs on high power electronics application.

Keywords

integrated circuits E-mode AlGaN/GaN MIS-HEMTs sawtooth generator

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