Compliance Current Effect on Switching Behavior of Hafnium Oxide based RRAM

Qi, YF;Zhao, C;Fang, YX;Lu, QF;Liu, CG;Yang, L;Zhao, CZ

[Qi, Yanfei; Zhao, Ce Zhou] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian, Shaanxi, Peoples R China.
[Qi, Yanfei; Zhao, Chun; Zhao, Ce Zhou] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou, Peoples R China.
[Zhao, Chun; Fang, Yuxiao; Lu, Qifeng; Liu, Chenguang; Zhao, Ce Zhou] Univ Liverpool, Dept Elect Engn & Elect, Liverpool, Merseyside, England.
[Yang, Li] Xian Jiaotong Liverpool Univ, Dept Chem, Suzhou, Peoples R China.

2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)

Volume:2017-July Pages:1-4

DOI:10.1109/IPFA.2017.8060188

Publication Year:2017

Document Type:Conference Paper

Identifier:http://hdl.handle.net/20.500.12791/004245

Abstract

In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf:Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 -> 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85 -> 54). HfAlOx (Hf:Al=9:1)) based one has the best resistance ratio (300-440) and resistance stability. All low resistance state (LRS) resistance values of three samples are around 100 Omega with large compliance current while there is a difference in HRS resistance which causes the ratio difference accordingly. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The appropriate compliance current selection and doping technology to high-k materials should be considered in further study.

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