Facile one-pot solvothermal preparation of Modoped Bi2WO6 biscuit-like microstructures for visible-light-driven photocatalytic water oxidation

Etogo, A;Liu, R;Ren, JB;Qi, LW;Zheng, CC;Ning, JQ;Zhong, YJ;Hu, Y

[Etogo, Atangana; Liu, Ren; Ren, Jiabin; Qi, Liwen; Zhong, Yijun; Hu, Yong] Zhejiang Normal Univ, Inst Phys Chem, Jinhua 321004, Peoples R China.
[Zheng, Changcheng] Xian Jiaotong Liverpool Univ, Dept Math Sci, Math & Phys Ctr, Suzhou 215123, Peoples R China.
[Ning, Jiqiang] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn, Suzhou 215123, Peoples R China.
[Hu, Yong] Zhejiang Univ, Coll Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China.

JOURNAL OF MATERIALS CHEMISTRY A

Volume:4 Issue:34Pages:13242-13250

DOI:10.1039/c6ta04923k

Publication Year:2016

JCR:Q1

CAS JCR:1区

ESI Discipline:MATERIALS SCIENCE

Latest Impact Factor:12.732

Document Type:Journal Article

Abstract

The adsorption behavior and the separation efficiency of photogenerated electron-hole pairs are two important elements in estimating the photocatalytic activity of a photocatalyst. In this work, we have developed a facile one-pot solvothermal method for the preparation of Mo-doped Bi2WO6 with uniform three-dimensional (3D) hierarchical porous biscuit-like microstructures (PBMs). Mo doping is found to have two important roles in the synthesis of Bi2WO6 particles, leading to porous microstructures and adjusting band gaps of the Bi2MoxW1-xO6 particles. The band structure of the as-prepared porous Bi2MoxW1-xO6 products is characterized by UV-vis diffuse reflectance spectroscopy and valence-band X-ray photoelectron spectroscopy. Density functional theory (DFT) calculations give further insights into the band structure of the Bi2MoxW1-xO6 products. In all the samples, Bi2Mo0.21W0.79O6 PBMs exhibit a very efficient catalytic performance in oxidizing water under visible light irradiation (lambda > 420 nm), with an average O-2 evolution rate of up to 147.2 mu mol h(-1) g(-1) and an apparent quantum efficiency (QE) of 3.1%% at 420 nm, representing a 2 times more enhancement compared with the non-doped Bi2WO6 sample. This study provides a simple method for designing metal-doped semiconductors with porous structures for different applications.

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